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, "New Ultra High Density EPROM and Flash EEPROM Cell with NAND Structure Cell," IEDM Tech Digest, 1987, p 552 58 M Momodomi et al, "An Experinmental 4-Mbit CMOS EEPROM with a NAND Structure Cell," IEEE J Solid-State Circ SC-24, 1238 (1989) 59 S Kobayashi et al, "A 33 V-Only 16Mb DINOR Flash Memory," IEEE J Solid-State Circ SC-29, 454 (1994) 60 H Onoda et al, "A Novel Cell Structur-e Suitable for 3 Volt Operation, Secor Erase Flash Memory," IEDM Tech Digest, 1992, p 599 61 J M Caywood and B L Prickett "Radiation Induced Soft Errors and Floating Gate Memory," Proc 21st Annual Int Relative Physics Symp, 1983, p 167 62 C R Crowell, "The Richardson Constant for the Thermionic Emission in Schottky Barrier Diodes," Solid-State Electron 8, 395 (1965) 63 T.

=2 =2 172 = 2

Uetsuki, "Study of the Degradation cf the Data Retention Characteristics of Floating Gate Type Nonvolatile Memory," Trans Inst Electron Inform Commun Eng C-IH J74C-II, 218 (1991) 64 R E Shiner et al, "Data Retention in EPROMs," 18th Annual Proc Int Relative Physics Symp, 1980, p 238 65 G Crisenza et al, "Charge Loss in EPROMs Due to Ion Generation and Transport in Interlevel Dielectrics," IEDM Tech Digest, 1990, p 107..

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INDEX reliability, 458 research background, 448-449 scaling, 458 switching time and currenet, 453-454 Ferroelectric nonvolatile memory, ULSI applications, 7 "FET ring" topology, CMOS technology, radiofrequency (RF) circuits: double-balanced mixer design, 512-513 highly integrated transceivers, 513-520 Field-dependent mobility, Boltzmann transport equation (BTE), 199-200 Field-enhanced tunnel injector flash (FETIF) EPROM: disturb failures, 425-426 floating-gate memory arrays, 410-412 First-order MOSFET models, 74-83 drain current: one-dimensional model, 75-76 strong inversion approximation, 79-82 subthreshold drain current, 82-83 one-dimensional Poisson equation, charge density, 76-79 Flash EEPROM memories: endurance failures, 423-424 floating-gate memory arrays, 406-421 DINOR cell, 417-421 field-enhanced tunnel injector flash (FETIF) EPROM, 410-412 NAND cell, 414-417 T-cell flash EPROM, 407-410 triple-poly, virtual ground (TPVG) flash cell, 412-414 Flicker noise characteristic, voltage-controlled oscillators (VCOs), 524-525 Floating-gate memory, 378-393 arrays: byte-alterable E2PROMs, 402-406 flash EEPROM memories, 406-421 future trends in, 426-430 reliability, 421-426 UV EPROMS, 393-402 future trends in, 426-430 hot-carrier effects, 308-309 physics of, 379-393 cell sensing, 391-393 binary sensing, 391-393 multilevel storage, 393 charge transfer, 379-391 avalanche injection, 379-381 channel hot-electron injection, 381-383 Fowler-Nordheim tunneling, 385-389 hot-electron injection, 379 source-side electron injection, 383-384

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Figures 7.11 and 7.12 show the simulation setup for optimization of the input and output impedance matching networks, respectively, by means of the 1 Port Opt box. As an example, the operating frequency is assumed to be

The Process Bends feature takes all of the flat pattern information, the bend information, and entities in the Flat Sketch, and rebuilds the model with the formed bends. The Flat Sketch under the Process Bends feature is the Insert Bends method version of a sketched bend. You can add sketch lines here to bend panels of the part. After you add lines to this sketch, exiting the sketch causes the part to be created with a default 90-degree bend corresponding to the line. Of course, all of the Sketched Bend rules exist, such as that the line has to extend at least up to the edges of the part, the lines cannot extend across multiple faces, and construction lines are ignored. For every bend created by a sketch line in the Process Bends Flat Sketch, a Flat Bend feature is added to the list under Process Bends. You can control the angle and radius of each of these Flat Bends by editing the Flat Bend feature. This is all illustrated in Figure 30.5.

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