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New to the Execute command in SQL Server 2005 is the capability to execute the code at a linked server, instead of only at the local server. The code is submitted to the linked server and the results are returned to the local server: EXEC[UTE] (Code) AT LinkedServerName

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Instead of a wide-bandgap emitter, a narrow-bandgap base may be used to increase the emitter efficiency OCEFrom Table 27 one can see Ge as possible material for a narrow-bandgap base Indeed, the lattice mismatch between Si and Ge restricts technological meaningful solutions to SiGe alloys with rather small Ge contents and thicknesses In high-frequency bipolar transistors, the base transit time UB contributes essentially to the total transit time (I rfT) measured by the transit frequency fT For a pure diffusion current, the base transit time TB can be reduced by an internal electric field (carrier drift) A Ge content gradient through the base provides the necessary electrical field With homogeneous doping (Fig 228), the mean electric field strength is roughly given by AEg/qWB, leading to reduced transit times.

Simionovici (European Synchrotron Research Facility, Grenoble, France) and C Schroer and B Lengeler (Aachen University of Technology, Germany) Their theory, design and properties are considered, as well as their use for imaging and microbeam production Some focus.

The main advantages of the SiGe drift base are an easy implementation into existing technologies and a low Ge-content stable structure The first industrial realizations of high-speed SiGe transistors and integrated circuits followed this concept54 The implementation into existing bipolar technologies leaves the drift transistor with a drawback common to high-frequency BJTs Base sheet resistivities increase with decreasing base widths because of low base doping and high emitter doping However, together with a very small emitter width, reduced external base 55 resistances and reduced parasitics using sophisticated self-alignment techniques this drift approach has already led to considerable improvement in transistor performance One has to consider that in a BJT the high doping shrinks (bandgap narrowing) 56 unfavorably the emitter bandgap, which can be counterbalanced by even a small amount of Ge in the base.

where Eg is the band gap, EA (ED) is the activation energy of the acceptor (donor), and e2/ rDA is the Coulomb energy for the pair at a distance rDA.68 When the excitation energy increases, the lm is ooded with photogenerated carriers. As a result, the average separation between the donor and the acceptor decreases, causing the blueshift.

From many examples of this technique we mention some devices that combine an epitaxial SiGe base with the double-poly, 58 self-aligned emitter base structure to obtain 74 GHzfmax,'7 a 60-Gbit/s multiplexer 59 and a 42-GHz static frequency divider Low parasitic capacitances allow high maximum oscillation frequency at low currents demonstrated by less than 10-fJ power-delay products of an ECL ring oscillator gate 60 Integration of high-speed analog 61 and digital integrated circuits for optical networks is demonstrated utilizing 62 super-self-aligned selectively grown SiGe base bipolar transistors Obviously a narrow-bandgap base results in improved emitter efficiency OCE similar to that of the wide-bandgap emitter The only difference appears at the basecollector interface, which is then a heterojunction Therefore, this concept is called a.

gate oxide thickness (tox), the depletion depths under the gate (Xdepl), the source-

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