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133 H L Stadler, "Ferroelectric Switching Time of BaTiO 3 Crystals at High Voltages," J Apple Phys 29, 1485 (1958) 134 T Mihara et al, "Process Dependent Electrical Characterization and Equivalent Circuit Model of Sol-gel based PZT Capacitors," Int Ferroelectrics, 1, 269 (1992) 135 G W Taylor, "Electrical Properties o1 Niobium-Doped Ferroelectric Pb(Zr, Sr, Ti)0 3 Ceramics," J Apple Phys 38, 4697 (1967) 136 W C Stewart and L S Cosentino Ferroelectrics1, 149 (1970) 137 D B Fraser and J R Maldonado, "Improved Aging and Switching of Lead ZirconateLead Titanate Ceramics with Indium Electrodes," J Apple Phys 41, 2172 (1970) 138 W R Salaneck, Ferroelectrics4, 97 (1)72) 139 J R Anderson et al, "Effects of Ambient Atmosphere on the Stability of Barium Titanate," J Apple Phys 26, 1387--138:3 (1955) 140 T D Hadnagy et al.

For instance, the Web server process does not depend on the database server process to run, but if the Web service is used as a user interface to access data on the database server to perform transactions, then it would rely on the database server process to be running System administrators are responsible for defining service groups in such a way that the resources within a service group are brought online in proper order to ensure that all resources in the group are brought online each time that service group needs to be brought online on a system.

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ng, t h Bi As wi ime i rs t t t he f t he n ter , yo u e r fa c e n te aps i e M ho n o ws P u Wi nd pt yo om yo u d i l l pr w her whe t t abo u vide o pro ike t l a t io n pplic our t his a s to y o n. acces mat i wi t h n fo r io n i ll i l o ca t yo u w u sl y, is i n Obvio ow th all ed to aps. ne use M r to o rde

, "The Use of Voltage to Accelerate the Endurance Degradation of PZT Capacitors," Int Ferroelectrics16, 219 (1997) 141 R Dat et al, "Imprint Testing of Ferroelectric Capacitors Used for Non-volatile Memories," Intl Ferroelectrics5, 275 (1997) 142 M Shimizu et al, "Effects of La and Nb Modification on the Electrical Properties of Pb(Zr,Ti)0 3 Thin Films by MOCVD," Intl Ferroelectrics14, 69 (1997) 143 J F Scott et al, "Radiation Effects on Ferroelectirc Thin-Film Memories: Retention Failure Mechanisms," J Apple Phys 66, 1444 (1989) 144 S S Eaton et al, "A Ferroelectric Nonvolatile Memory," ISSCC Digest Tech Papers, 1988, p 130 145 H Koike et al, "A 60-n 1-Mb Nonvolatile Ferroelectric Memory with a Nondriven Cell Plate Line Write-Read Scheme," IEET J Solid-State Circ JSSC-31, 1625 (1996) 146 S Onishi et al, "A Half-Micron Ferroelectric Memory Cell Technology with Stacked Capacitor Structure," IEDM Tech Digest, 1994, p.

such as text boxes and labels instead. Listing 26-2, taken from the ControlExample project, demonstrates the creation of a generic control: Listing 26-2: Adding a Generic Control to a Form

In the preceding example, if we define a service group called websg that contains the mount point resource /opt/apache and the Web server process, we have to make sure the Web server is the parent of the mount point resource /opt/apache so that each time VCS has to bring the service group online it will mount /opt/apache before starting the httpd daemon Failure to do so may cause VCS to start httpd before it mounts or while it is mounting the file system /opt/apache, resulting in a failure to bring the service group websg online..

843 147 S L Miller and P J McWhorter, "Piysics of the Ferroelectric Nonvolatile Memory Field Effect Transistor," J Apple Phy:: 72, 5999 (1992) 148 T A Rabson et al, "Ferroelectric Gate Transistors," Int Ferroelectrics 6, 15 (1995)..

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bandwidth, error performance, distance, and resiliency. There are wireless alternatives, although they generally have failed in practice or remain either in development or eld trial at the moment. 9.1.1 Generic Digital Subscriber Line

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17.2 IMPLICATION OF 6 DESIGN 17.2.1 6 and Yield Rate Appendix 17.A.1 introduces random variables and the fundamentals of random process. For a random variable C, the ratio of relative deviation from the average m to the standard deviation , is de ned as

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